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  continental device india limited data sheet page 1 of 4 CTN635, 637, 639 npn silicon planar epitaxial transistors ctn636, 638, 640 pnp silicon planar epitaxial transistors complementary transistors in plastic package for driver stage of audio amplifier. CTN635, ctn637, ctn639 ctn636, ctn638, ctn640 1 = collector 2 = base 3 = emitter absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute maximum ratings ratings ratings ratings ratings ratings symbol symbol symbol symbol symbol CTN635 CTN635 CTN635 CTN635 CTN635 ctn637 ctn637 ctn637 ctn637 ctn637 ctn639 ctn639 ctn639 ctn639 ctn639 units units units units units ctn636 ctn636 ctn636 ctn636 ctn636 ctn638 ctn638 ctn638 ctn638 ctn638 ctn640 ctn640 ctn640 ctn640 ctn640 collector-base voltage v cbo 45 60 100 v collector-emitter voltage v ceo 45 60 80 v emitter-base voltage v ebo 5-v collector current ? continuous i c -1-a peak i cm - 1.5 - a base current ? continuous i b - 100 - ma peak i bm - 200 - ma power dissipation @ ta=25oc p d - 750 - mw derate above 25c - 6 - mw/c power dissipation @ tc=25oc p d - 2.5 - w derate above 25c - 20 - mw/c operating and storage junction t j ,t stg ?55 to +150 oc temperature range 1 2 3 is / iecqc 700000 is / iecqc 750100 is/iso 9002 lic# qsc/l- 000019.2 continental device india limited an is/iso 9002 and iecq certified manufacturer e b c to-237 plastic package
continental device india limited data sheet page 2 of 4 electrical characteristics electrical characteristics electrical characteristics electrical characteristics electrical characteristics (ta =25oc unless otherwise specified) characteristic characteristic characteristic characteristic characteristic symbol symbol symbol symbol symbol min. min. min. min. min. typ. typ. typ. typ. typ. max. max. max. max. max. unit unit unit unit unit collector-emitter voltage 635, 636 635, 636 635, 636 635, 636 635, 636 bv ceo 45 - - v i c =10ma, i b =0 637, 638 637, 638 637, 638 637, 638 637, 638 60 - - v 639, 640 639, 640 639, 640 639, 640 639, 640 80 - - v collector-base voltage 635, 636 635, 636 635, 636 635, 636 635, 636 bv cbo 45 - - v i c =100a, i e =0 637, 638 637, 638 637, 638 637, 638 637, 638 60 - - v 639, 640 639, 640 639, 640 639, 640 639, 640 100 - - v emitter-base voltage i e =10a, i c =0 bv ebo 5--v collector cutoff current v cb =30v, i e =0 i cbo - - 100 na v cb =30v, i e =0, ta=125c - 10 a base emitter on voltage i c =500ma, v ce =2v v be(on) * - - 1.0 v collector-emitter (sat) voltage i c =500ma, i b =50ma v ce(sat) * - - 0.5 v d.c. current gain i c =5ma, v ce =2v 635, 636 635, 636 635, 636 635, 636 635, 636 h fe 25 - - i c =150ma, v ce =2v* 637, 638 637, 638 637, 638 637, 638 637, 638 40 - 160 639, 640 639, 640 639, 640 639, 640 639, 640 40 - 160 i c =500ma, v ce =2v* 25 - - dynamic characteristics dynamic characteristics dynamic characteristics dynamic characteristics dynamic characteristics input capacitance v be =0.5v, i c =0, npn npn npn npn npn c ib -50 -pf f=1mhz pnp pnp pnp pnp pnp - 110 - pf input capacitance v cb =10v, i c =0, npn npn npn npn npn c ob -7-pf f=1mhz pnp pnp pnp pnp pnp -9-pf transition frequency i c =10ma, v ce =5v, npn npn npn npn npn f t - 130 - mhz f=35mhz pnp pnp pnp pnp pnp - 50 - mhz * pulse test: pulse width 300s, duty cycle 2%. CTN635, ctn637, ctn639 ctn636, ctn638, ctn640
continental device india limited data sheet page 3 of 4 CTN635, ctn637, ctn639 ctn636, ctn638, ctn640 dc current gain dc current gain dc current gain dc current gain dc current gain v ce = 2v i c collector current (ma) current gain bandwidth product current gain bandwidth product current gain bandwidth product current gain bandwidth product current gain bandwidth product v ce = 2v i c collector current (ma) saturation and on voltages saturation and on voltages saturation and on voltages saturation and on voltages saturation and on voltages i c collector current (ma) v beon at v ce = 2v v cesat at i c /i b = 10 h fe - current gain f t - current gain bandwidth product (mhz) voltage (v) v besat at i c /i b = 10
continental device india limited data sheet page 4 of 4 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com


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